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| HERMETIC SILICON PHOTOTRANSISTOR L14C1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14C2 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) 0.100 (2.54) DIA. 2 1 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) 45 O0.021 (0.53) 3X 3 0.050 (1.27) SCHEMATIC (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES * Hermetically sealed package * Wide reception angle 2001 Fairchild Semiconductor Corporation DS300305 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14C1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 50 50 7 300 600 L14C2 Unit C C C C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/C above 25C ambient. 2. Derate power dissipation linearly 6.00 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14C1 On-State Collector Current L14C2 On-State Collector Current L14C2 Turn-On Time Turn-Off Time Saturation Voltage IC = 10 mA, Ee = 0 IE = 100 A, Ee = 0 IC = 100 A, Ee = 0 VCE = 20 V, Ee = 0 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 1.0 mW/cm2, VCE = 5 V(7,8) IC = 2 mA, VCC = 10 V, RL =100 IC = 2 mA, VCC = 10 V, RL =100 IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8) BVCEO BVEBO BVCBO ICEO IC(ON) IC(ON) IC(ON) ton toff VCE(SAT) 50 7.0 50 -- 40 .16 .08 .16 5 5 -- -- -- -- 100 -- -- -- 0.40 V V V nA Degrees mA mA mA s s V www.fairchildsemi.com 2 OF 4 6/01/01 DS300305 HERMETIC SILICON PHOTOTRANSISTOR L14C1 Figure 1. Light Current vs. Collector to Emitter Voltage 10 IL, NORMALIZED LIGHT CURRENT Ee = 20 mW/cm2 Ee = 10 mW/cm2 1.0 Ee = 5 mW/cm2 Ee = 2 mW/cm2 0.1 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 10 10 L14C2 Figure 2. Normalized Light Current vs. Radiation II, NORMALIZED LIGHT CURRENT 1.0 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 0.1 .01 0.1 1.0 100 .01 .01 1.0 10 100 VCE , COLLECTOR TO EMITTER VOLTAGE (V) Ee - TOTAL IRRADIANCE IN mW/cm2 ton and toff, NORMALIZED TURN ON AND TURN OFF TIMES Figure 3. Dark Current vs. Temperature 1000 100 ID, DARK CURRENT (A) 10 1.0 0.1 .01 .001 VCE = 20 V Ee = 0 mW/cm2 Figure 4. Switching Speed vs. Output Current 10 RL = 1K 1.0 NORMALIZED TO: VCE = 10 V I C = 2 mA ton = toff = 5 sec R L = 100 .01 1 1.0 IC, OUTPUT CURRENT (mA) 10 RL = 100 RL = 10 0 25 50 75 100 125 150 100 T, TEMPERATURE (C) Figure 5. Spectral Response 1.0 0.9 0.8 RELATIVE RESPONSE 0.7 RELATIVE OUTPUT (%) 0.6 0.5 0.4 0.3 0.2 0.1 0 500 600 700 800 900 1000 1100 130 120 110 100 90 80 70 60 50 40 30 20 10 -60 Figure 6. Angular Response Curve -40 -20 0 20 40 60 , WAVE LENGTH (NANOMETERS) , ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) DS300305 6/01/01 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 6/01/01 DS300305 |
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